| 摘要 |
PURPOSE: A method for manufacturing a storage electrode is to simplify a manufacturing process, to improve a capacitance, and to improve step coverage, by forming the storage electrode to have irregular grooves. CONSTITUTION: The first insulating film(12) is formed on a semiconductor substrate(11), and is removed to form a contact hole, so that a region, which is predetermined to contact with a storage electrode, is exposed. A conductive layer(14) is formed on the substrate to fill the contact hole, and the second insulating film(15) is formed on the conductive layer. A photoresist pattern is formed on the second insulating film to define the storage electrode. The exposed insulating film and the conductive layer are removed to form the second insulating film pattern and a conductive layer pattern. The photoresist pattern is annealed under a certain temperature to polymerize photoresist compound and resin. The photoresist pattern is silylated to form a silylation film. The photoresist pattern is overly etched to form a photoresist residual layer.
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