METHOD FOR MANUFACTURING A NON-VOLATILE MEMORY DEVICE CAPABLE OF PREVENTING DAMAGES TO THE STACKED GATE SIDE WALLS AND ACTIVE REGIONS

摘要

PURPOSE: A method is provided to prevent damages to a side wall region adjacent to a source region of a stacked gate structure by forming an etching damage prevention layer on an entire surface of a stacked gate structure and an active region. CONSTITUTION: A semiconductor substrate(100) is provided. Plural field oxide layers extended in parallel in one direction is formed on the semiconductor substrate(100) to define plural active regions. Plural stacked gates vertical to the plural active regions are formed. A source regions(148) and a drain regions(143) are formed in the active regions exposed between the stacked gates. An etching damage prevention layer(150) is formed on the active regions and an entire surface of the stacked gates. The semiconductor substrate region is exposed by etching the field oxide layers exposed between the stacked gates.