| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device having a dual gate is provided to prevent channeling in a junction region of a PMOS transistor while preventing a defect. CONSTITUTION: A method for manufacturing a semiconductor device having a dual gate comprises the steps of: defining active regions for PMOS and NMOS transistors by a field oxidation layer(13), forming N and P wells(11, 12) in the PMOS and NMOS transistors respectively and making P+ and N+ gates in the N and P wells respectively by inserting a gate oxidation layer(14); forming raw non-crystallized layer on the surface of the N well on both sides of the P+ gate(15a) while forming N- lightly doped drain(LDD) regions(16a, 16b) in the P well on both sides of the N+ gate(15b) by firstly injecting N-type impurity ions into the entire surface of the substrate; and forming P- LDD regions(18a, 18b) by secondly injecting P-type impurity ions into the N well of the PMOS transistor region to the deeper depth than the raw non-crystallized layer(A).
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