| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can reduce the number of manufacturing processes by restraining re-diffusion of impurities from a source/drain region, and simplifying a process. SOLUTION: This manufacturing method consists of a process, wherein a gate insulating film 8, conductor layers 9, 10 and an offset insulating film 11 are laminated on a semiconductor substrate 1, and a gate electrode having a specified pattern is formed through etching, a process for forming an LDD region 14 by causing relatively light dopant to diffuse, a process for forming a sidewall 15 in a gate electrode, a process for forming an interlayer insulating film 18 on the whole surface and boring a contact hole, and a process wherein the side wall is used as a mask, and causing relatively heavy dopant to diffuse in the contact hole bottom part, thereby forming a source/drain region 16.
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