发明名称 ZINC/INDIUM-BASE BM FILM AND PRODUCTION OF BM FILM
摘要 PROBLEM TO BE SOLVED: To provide BM films which lessen particle generation with low environmental pollution. SOLUTION: The BM films 51 and 71 of a laminated structure are formed of light transmissive layers 54 and 74 consisting of oxide thin films or nitride thin films and metallic reflection layers 55 and 75 consisting essentially of indium or zinc by using a target consisting essentially of the indium or the zinc. The black BM films of low reflection may be obtained by adequately selecting the amount of the gaseous oxygen to be added or the amount of the gaseous nitrogen to be added into a sputtering atmosphere. Since stresses are smaller than the chromium-base BM films, the particle generation does not occur and the problem of the environment pollution does not occur even at the time of etching.
申请公布号 JP2000121824(A) 申请公布日期 2000.04.28
申请号 JP19980291247 申请日期 1998.10.14
申请人 ULVAC JAPAN LTD 发明人 ISHIBASHI AKIRA;KIYOTA JUNYA;SUGIURA ISAO;ARAI MAKOTO;NAKAMURA HAJIME;HORI TAKAHIDE;HAYASHI SHIMEI;OTA YOSHIFUMI
分类号 G02B5/20;C23C14/06;C23C14/14;G02F1/1335 主分类号 G02B5/20
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