| 摘要 |
PROBLEM TO BE SOLVED: To improve the efficiency of light emission by forming a wide-gap semiconductor layer whose thickness is larger than de Broglie wave and smaller than a deformed critical film, on the side face of an active area containing arsenic. SOLUTION: An n-InP lower clad layer 12, an i-InAlAs lower SCH layer 13, an i-InAsP well layer 15 and a barrier layer 16 as an active area 14, an i-InAlAs upper SCH layer 17, and a p-InP upper clad layer 18 are allowed to grow in sequence on an InP substrate 11, forming a semiconductor laser substrate 41. Then, the substrate 41 is etched like a stripe by using an SiO2 film 42 as a mask, forming a mesa stripe 43. After making an oxidized layer 54 thick on the side surface of the mesa stripe 43, an arsenic/phosphorus substitution area 58 for wide-gap semiconductor layer, whose thickness is larger than de Broglie wave and smaller than the deformed critical film, is formed on the side face of the active area 14.
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