发明名称 |
Method of manufacturing semiconductor article |
摘要 |
A method of manufacturing a semiconductor article comprises steps of preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on the porous silicon layer, bonding the first substrate and a second substrate to produce a multilayer structure with the nonporous semiconductor layer located inside, separating the first and second substrates of the multilayer structure from each other along the porous silicon layer by heating the multilayer structure and removing the porous silicon layer remaining on the separated second substrate.
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申请公布号 |
US6054363(A) |
申请公布日期 |
2000.04.25 |
申请号 |
US19970968664 |
申请日期 |
1997.11.12 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAGUCHI, KIYOFUMI;YONEHARA, TAKAO;ATOJI, TADASHI |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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