| 摘要 |
PURPOSE: A signal input device of insulation gate transistor is provided to surely prevent electrostatic destroy. CONSTITUTION: A signal input device of insulation gate transistor comprises an insulation substrate (10), a first wiring part, an insulation gate transistor signal processing circuit, a second wiring part, a first protect diode circuit(D1), and a second protect diode circuit(D2). The first wiring part receives signals from outside. The signal processing circuit is formed on the insulation substrate and processes signals supplied through the first wiring part. The second wiring part inputs the signals processed by the processing circuit to a load circuit. The first and second protect diodes are respectively connected to the first and second wiring parts in order to discharge static electricity.
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