| 摘要 |
<p>The problem of bending or distortion of patterns in a fine pattern formation method used in the fabrication of semiconductors is solved by a pattern formation method using a supercritical fluid for drying. Such a method can comprise the steps of forming a resist pattern layer; performing a rinse process by exposing said resist pattern layer to a rinse solution; supplying supercritical carbon dioxide having a pressure of not more than 8.5 MPa to an ambient of said substrate, after the rinse process and before the rinse solution sticking to said layer dries out, and vaporizing said supercritical carbon dioxide by lowering the pressure of the ambient of said substrate. In another embodiment a processing fluid not in the gaseous state is supplied to an ambient of the substrate, followed by a supercritical fluid being supplied to the ambient of the substrate, the processing fluid being a gas in steady state.</p> |
