发明名称 BUMP-FORMING BARRIER METAL AND FORMATION OF THE BUMP
摘要 <p>PROBLEM TO BE SOLVED: To provide a bump-forming barrier metal, which can form a bump having small thickness dispersion without increasing cost and without imparting breakage to a wafer. SOLUTION: This is a bump-forming barrier metal, which is present between an electrode 2 and a bump 4, when a stud bump 4 is formed on the electrode 2 formed on a semiconductor element 1. The metal is formed by bonding a sheet-shaped member 3, comprising the material that does not diffuse into the metal constituting the stud bump 4 on the electrode 2 through ultrasonic-wave welding.</p>
申请公布号 JP2000100848(A) 申请公布日期 2000.04.07
申请号 JP19980268226 申请日期 1998.09.22
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 INOUE TOMOHIRO;KUZUHARA KAZUNARI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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