发明名称 |
BUMP-FORMING BARRIER METAL AND FORMATION OF THE BUMP |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a bump-forming barrier metal, which can form a bump having small thickness dispersion without increasing cost and without imparting breakage to a wafer. SOLUTION: This is a bump-forming barrier metal, which is present between an electrode 2 and a bump 4, when a stud bump 4 is formed on the electrode 2 formed on a semiconductor element 1. The metal is formed by bonding a sheet-shaped member 3, comprising the material that does not diffuse into the metal constituting the stud bump 4 on the electrode 2 through ultrasonic-wave welding.</p> |
申请公布号 |
JP2000100848(A) |
申请公布日期 |
2000.04.07 |
申请号 |
JP19980268226 |
申请日期 |
1998.09.22 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
INOUE TOMOHIRO;KUZUHARA KAZUNARI |
分类号 |
H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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