发明名称 METHOD FOR PLATING WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for plating a wafer capable of regulating the electric fields of respective parts over a wide range on the wafer surface and forming a plating of a uniform film thickness on the wafer surface. SOLUTION: The wafer 100 is immersed into an electroplating liquid crystal 20 and an anode electrode 30 is immersed therein in parallel with the wafer 100 part a prescribed distance from the wafer 100. Further, a shielding plate 50 consisting of a dielectric substance provided with a hole 51 at the center is immersed between the wafer 100 and the anode electrode 30 in parallel with the wafer 100. While the shielding plate 50 is moved in the electroplating liquid 20, current is supplied between the wafer 100 and the anode electrode 30, by which the surface of the wafer 100 is subjected to plating.
申请公布号 JP2000096292(A) 申请公布日期 2000.04.04
申请号 JP19980269929 申请日期 1998.09.24
申请人 EBARA CORP 发明人 YOSHIOKA JUNICHIRO;SAITO NOBUTOSHI
分类号 C25D7/12;H01L21/288;(IPC1-7):C25D7/12 主分类号 C25D7/12
代理机构 代理人
主权项
地址