| 摘要 |
<p>A chemical vapor deposition (CVD) reactor (2) is described which comprises an annular reaction zone (18) with means for one or more reactive gases to be passed in single pass radial flow in which there is little lateral diffusion, means for preventing recirculation of reactive gases or reaction products from occuring at any point in the reaction chamber, and means in the reaction chamber for maintaining a laminar gas flow. Rotational means permit the wafer support plates (32) and wafers (34) to be rotated around the central axis (4) of the reaction zone (18) and different gases (A, B) may be passed over the wafers (34) at different points in the reaction zone (18) such that two or more materials can be deposited on the wafers (34) during a single reactor run. Rotation through alternating deposition zones can also be done repeatedly such that a series of alternating layers of two different deposited materials is built up.</p> |
