| 摘要 |
PURPOSE:To easily form a current blocking layer with sufficient controllability, in the deep part of crystal layer, by performing ion implantation in a buried- growth layer to form a current blocking layer after a mesa containing an active layer is buried with the same conduction type layer and is grown. CONSTITUTION:After an InGaAsP active layer and a P-type InP clad layer 6 are grown on an N-type InP substrate, a whole part is eliminated by etching, while the active layer of 0.5-2mum thick is left thereon. Then the whole part containing a mesa is buried with a P-type InP layer, and an InGaAsP cap layer is grown on its surface. Ion implantation of S, Se or Si is performed excepting the part to be a current path, and an N-type InP layer is formed by an annealing treatment. Comparing with a burying structure wherein a P-type layer and an N-type layer are selectively grown on the both sides of a mesa in the time of buried-growth, a current blocking layer can be easily formed thereby. It is also easily achieved to form an N-type layer in a P-type layer applying ion implantation.
|
