| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon oxide film, having a good step coverage by forming an insulating film whose main component is silicon oxide by a plasma CVD method, in a mixed atmosphere including organic silane having an ethoxy group, oxygen, a halogen element which has specific concentration, and carbon having specific concentration or less. SOLUTION: A substance expressed by a chemical formula of Si(OC2H5)4 (tetraethoxysilane) or the like is desirable as organic silane having an ethoxy group and a substance expressed by a chemical formula of C2Cl3 (trichloroethylene) or the like is desirable as hydrogen carbide including chlorine. A film formed in this mixed atmosphere by a plasma CVD method and including silicon oxide is formed over and in contact with an island-shaped non-single crystal semiconductor region, whose main component is silicon and includes a halogen element at a concentration of 1×1017 to 5×1020 cm3 and carbon at a concentration of 5×1017 cm3 or less, which are detected by a secondary ion mass spectrometric analysis, and it is desirable to reduce the concentration of carbon to 1×1018 cm3 or less.
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