| 摘要 |
PROBLEM TO BE SOLVED: To form an aluminum nitride film having high terminal conductivity and chemical resistance. SOLUTION: After the inner pressure of a chamber 31 is controlled to <=1×10-6 Torr, sputtering discharge is started by using an aluminum target 34, supplying nitrogen gas to a sputtering gun 35 and injecting ions of the nitrogen gas to the target 34. After the start of the sputtering discharge, a nitrogen- oxygen mixture gas in which the partial pressure ratio of oxygen is 0.2 to 5% is supplied from a mixture gas supply source 42 into a chamber 31. The gas pressure in the chamber 31 during sputtering is controlled within the range of 0.02 mTorr to 0.3 mTorr.
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