| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing the crystal of a thin CdZnTe film, capable of forming the thin CdZnTe mixed crystal film having a high quality in good composition ratio controllability by a molecular ray epitaxy method. SOLUTION: This method for growing the crystal of a thin CdZnTe film comprises irradiating CdTe molecule rays, ZnTe molecule rays and Te molecule rays (or irradiating Cd molecule rays, Zn molecule rays and Te molecule rays) on a substrate to epitaxially grow the thin CdZnTe mixed crystal film. Therein, the irradiation dose of a group VI, Te, is larger than those of group II elements, Cd and Zn. The irradiation dose ratio (VI/II ratio) of the group VI element/ group II element is preferebly 1.02-1.3.
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