| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can form a stable capacitor by forming an etching prevention film for preventing the upper region of a storage contact plug and a storage node from being overetched by an etching by-product, which is generated when an insulation film is etched by forming an insulation film which is formed in a conductive film lower part for formation of a storage node of a film which is different from the conventional. SOLUTION: A storage node 116 is formed by overetching a second conductive film 110 on an uppermost part layer on a multilayer insulation film 108 comprising nitrogen components. Since an etching preventing film 118 is formed in both side walls of a second conductive film, it is possible to prevent the increase of resistance and falling down of the storage node 116 generated as a storage contact plug 114 inside a contact hole, and the storage node 116 are etched due to overetching for the formation of the storage node 116. |
