发明名称 SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To make avoidable the peeling of a deposited film and the deterioration of a vacuum atmosphere by using titanium as the material of a substrate holder which holds a substrate when at least a magnetic film is formed on the substrate by sputtering. SOLUTION: Titanium is used as the material of jigs located near a sputtering target 7 and exposed to considerable film deposition, e.g. a substrate holder 2, a substrate shield 3 and a ground shield 4 and the jigs are preferably subjected to low gas emission treatment, in particular treatment with a sulfuric acid-base acid bath. Before or after the treatment, the surfaces of the jigs are preferably roughened by a method such as sandblast. A controlled oxide is formed on the surfaces of the jigs by the acid bath treatment and films deposited by the scattering of a sputtering target material are removed. An Al alloy chemically polished with a treating soln. consisting essentially of sulfuric acid and phosphoric acid is used as the material of a chamber wall shield 5 and other parts exposed to relatively slight film deposition.
申请公布号 JP2000067432(A) 申请公布日期 2000.03.03
申请号 JP19980237682 申请日期 1998.08.24
申请人 ASAHI KOMAGU KK 发明人 MIYAMURA KENRO;MORIMOTO TAMOTSU;MURAYAMA KENJI
分类号 C23C14/34;G11B5/85;(IPC1-7):G11B5/85 主分类号 C23C14/34
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