Method for heat treatment of silicon wafer and silicon wafer

摘要

There is disclosed a method for heat treatment of a silicon wafer performed in a reducing atmosphere containing hydrogen by utilizing a rapid thermal annealer, characterized in that the heat treatment comprises a plurality of steps each of which is performed with a differently defined heat treatment condition. In this method, the heat treatment comprising a plurality of steps may be continuously performed without taking out the wafer from an RTA apparatus. The method of the present invention can, in particular, reduce COP density of the silicon wafer surface, reduce its microroughness and haze, and thus improve electric characteristics such as oxide dielectric breakdown voltage and mobility of carriers.