| 摘要 |
PROBLEM TO BE SOLVED: To accelerate both reading and writing in a semiconductor device having multi-ports. SOLUTION: At least, ones (for example, reading ports RPT1, RPT2) of a plurality of reading ports and a plurality of writing ports connected to bit lines BLi1, BLi2 are stored in a memory cell. The semiconductor memory comprises switching elements (for example, transmission gates TG1, TG2) connected to the lines BLi1, BLi2, conducted at the time of writing data and sending the data to the bit lines without almost changing at its potential, and an equalizer (for example, bit line short-circuiting transistor TS and two-input NAND circuit) for short-circuiting the bit lines at the time of reading the data to redistribute charge. |
