| 摘要 |
<p>A process for producing a silicon carbide sinter which comprises a step in which a silicon carbide powder, an organic material comprising at least one nitrogen source, and either an organic material comprising at least one carbon source or a carbon powder are dissolved or dispersed in a solvent to produce a mixed-powder slurry, a step in which the slurry is poured into a mold and dried to produce a green shape, and a step in which the green shape is immersed in high-purity silicon metal kept molten by heating at 1,450 to 1,700 °C in a vacuum or inert-gas atmosphere to allow silicon to infiltrate into pores of the green shape through capilarity and react with free carbon in the green shape to yield silicon carbide and thus fill the pores; and a silicon carbide sinter which is obtained by the reactive sintering method and has a density of 2.90 g/cm3 or higher, a volume resistivity of 100 Φ.cm or lower, and a nitrogen content of 150 ppm or higher.</p> |
