SILICON SINGLE CRYSTAL WAFER DOPED WITH NITROGEN HAVING LOW GROW-IN DEFECT AND A PROCESS THEREOF

摘要

PURPOSE: Silicon single crystal wafer having low grow-in defect and N-region of crystal's entire surface doped with nitrogen is manufactured by czochralski method. CONSTITUTION: Manufacturing process of silicon single crystal wafer consisted of pulling silicon single crystal with doping nitrogen by czochralski method in N-region of defect distribution chart by distance(mm) from crystal center to around crystal as horizontal axis and F/G(mm¬2/°C.min) value as vertical axis when indicate pulling rate to F(mm/min) and average of temperature grade in crystal of pulling axis direction within silicon melting point to 1400°C.