发明名称 MARK PATTERN FOR LITHOGRAPHY AND METHOD FOR FORMING SAME
摘要 PURPOSE: A mark pattern for lithography is provided to increase a contact area between an inner box and a lower layer so that the inner box can be prevented from being detached. CONSTITUTION: A color pattern, or a predetermined pattern such as a contact hole pattern is formed on a lower layer(100 ), and an inner box(110 ) is deposited on a lower layer(100 ), so that a contact area between a lower layer(100 ) and an inner box(110 ) can be increased, thereby preventing an inner box(110 ) from being detached.
申请公布号 KR20000004513(A) 申请公布日期 2000.01.25
申请号 KR19980025957 申请日期 1998.06.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD 发明人 KWON, GI SEONG
分类号 H01L21/302;(IPC1-7):H01L21/302 主分类号 H01L21/302
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