发明名称 |
METHOD FOR FORMING A PHASE SHIFTING MASK |
摘要 |
PURPOSE: A method for forming a phase shifting mask is provided to produce a phase shifter of the phase shifting mask for securing an evenness in phase difference. CONSTITUTION: A method for forming a phase shifting mask comprises: forming a binary mask pattern(12); depositing successively an insulating film(14) and a first resist film(16) on the top surface of a mask substrate; patterning the first resist film and the insulating film successively deposited; spraying a second resist film(18) on the whole surface of the insulating pattern and the binary mask pattern; patterning the second resist film for exposing the surface of the mask substrate; forming a phase shifter(S) composed of an etching stopping film connected to the insulating pattern; and eliminating the second resist film.
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申请公布号 |
KR20000002913(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980023895 |
申请日期 |
1998.06.24 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD |
发明人 |
KIM, GIL GIL |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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