发明名称 METHOD FOR FORMING A PHASE SHIFTING MASK
摘要 PURPOSE: A method for forming a phase shifting mask is provided to produce a phase shifter of the phase shifting mask for securing an evenness in phase difference. CONSTITUTION: A method for forming a phase shifting mask comprises: forming a binary mask pattern(12); depositing successively an insulating film(14) and a first resist film(16) on the top surface of a mask substrate; patterning the first resist film and the insulating film successively deposited; spraying a second resist film(18) on the whole surface of the insulating pattern and the binary mask pattern; patterning the second resist film for exposing the surface of the mask substrate; forming a phase shifter(S) composed of an etching stopping film connected to the insulating pattern; and eliminating the second resist film.
申请公布号 KR20000002913(A) 申请公布日期 2000.01.15
申请号 KR19980023895 申请日期 1998.06.24
申请人 HYUNDAI ELECTRONICS IND. CO., LTD 发明人 KIM, GIL GIL
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址
您可能感兴趣的专利