发明名称 OUTPUT GATE FOR CHARGE TRANSFER
摘要 PURPOSE: An output gate for the charge transfer is provided to effectively control the transfer and off of the electric charge by lowering the potential well of the charge transfer. CONSTITUTION: The output gate for the charge transfer comprises: plural active fields formed on the semiconductor substrate; a gate insulating film formed on the semiconductor substrate including the active fields; a first gate couple(1) or an nth gate couple formed, separated by the insulating film on the gate insulating film, corresponding to the active fields; and an output gate(3) separated by the insulating film beside the nth gate couple.
申请公布号 KR20000002859(A) 申请公布日期 2000.01.15
申请号 KR19980023805 申请日期 1998.06.24
申请人 HYUNDAI ELECTRONICS IND.CO.,LTD 发明人 KIM, JONG HWA
分类号 H01L29/76;(IPC1-7):H01L29/76 主分类号 H01L29/76
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