发明名称 |
OUTPUT GATE FOR CHARGE TRANSFER |
摘要 |
PURPOSE: An output gate for the charge transfer is provided to effectively control the transfer and off of the electric charge by lowering the potential well of the charge transfer. CONSTITUTION: The output gate for the charge transfer comprises: plural active fields formed on the semiconductor substrate; a gate insulating film formed on the semiconductor substrate including the active fields; a first gate couple(1) or an nth gate couple formed, separated by the insulating film on the gate insulating film, corresponding to the active fields; and an output gate(3) separated by the insulating film beside the nth gate couple.
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申请公布号 |
KR20000002859(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980023805 |
申请日期 |
1998.06.24 |
申请人 |
HYUNDAI ELECTRONICS IND.CO.,LTD |
发明人 |
KIM, JONG HWA |
分类号 |
H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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