| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which has a surge voltage resisting function and good responsiveness to high-frequency superposition and pulse modulation. SOLUTION: A semiconductor laser device is constituted in such a way that a semiconductor laser chip 1, having an anode and a cathode and a field effect transistor 4 are connected in parallel with each other, and the anode of the chip 1 is connected to the drain of the transistor 4. In addition, the gate of the transistor 4 is connected to the drain of the transistor 4, and the cathode of the chip 1 is connected to the source of the transistor 4. |
