| 摘要 |
PROBLEM TO BE SOLVED: To obtain an ITO target forming an ITO film having low resistance and high light transmittance stable for a long time by suppressing the ratio of oxygen atoms to indium atoms in the matrix phases of an ITO sintered body contg. a specified ratio of tin in a specified range. SOLUTION: In an ITO sintered body contg. 1.9 to 9.8 atomic% tin, by suppressing the ratio between oxygen atoms and indium atoms in the matrix phases (oxygen atoms/indium atoms) in the range of 1.70 to 1.95, a target for a low resistance film is obtd. For this purpose, it is preferable that presintering is executed at about 1,350 to 1,500 deg.C in the air or in an oxygen atmosphere, and after that, atmosphere controlling HIP(hot isostatic pressing) treatment suppressing the decomposition of ITO is preferably executed at about 1,350 to 1,450 deg.C, by which an ITO target having >=95% relative density can be produced. In this way, the ITO film of low resistance of about 1.5×10-4Ω.cm or below can be obtd., and, moreover, abnormal discharge at the time of the film formation can be suppressed.
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