| 摘要 |
PROBLEM TO BE SOLVED: To obtain a target material for forming a thin film in which leak current is reduced and the generation of soft errors is prevented by specifying the total content of Na, K, Mg, Fe, Ni, Co, Cr, Cu and Al and the content of each element of U and Th in a layered perovskite type oxide sintered body composed of specified ratios of Sr, Bi, Ta and O. SOLUTION: In a target material for sputtering composed of a layered perovskite type oxide sintered body expressed by the general formula of SrxBiyTa2O5+x+3y/2 (where 0.7<x<1.2 and 2<y<3), the total content of Na, K, Mg, Fe, Ni, Co, Cr, Cu and Al is adjusted to <=100 ppm, preferably to <=10 ppm, and the content of each element of U and Th is adjusted to <=10 ppb, preferably to <=1 ppb. Moreover, as the starting raw materials of the target, SrCO3 powder, Bi2CO3 powder and Ta2O5 powder in which the contents of the impurities are controlled are used, which are sintered by a hot pressing method or the like and are subjected to HIP treatment to produce the target having >=98% relative density. |
