发明名称 |
Divided photodiode |
摘要 |
A divided photodiode includes a semiconductor substrate; a semiconductor layer formed on a surface of the semiconductor substrate; and a plurality of isolating diffusion regions formed in a plurality of regions in the semiconductor layer so as to respectively extend from a surface of the semiconductor layer opposite to the other surface thereof in contact with a surface of the semiconductor substrate and to reach regions under the surface of the semiconductor substrate, thereby dividing the semiconductor layer into at least three semiconductor regions. A first buried diffusion region is further formed under the other isolating diffusion regions except for a particular one located in an isolating section in a combination of a plurality of the semiconductor regions which are adjacent to each other via the isolating section, and a depletion of the semiconductor substrate in a region under the other isolating diffusion region by the application of a reverse bias thereto is suppressed.
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申请公布号 |
US6005278(A) |
申请公布日期 |
1999.12.21 |
申请号 |
US19980012820 |
申请日期 |
1998.01.23 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
FUKUNAGA, NAOKI;TAKIMOTO, TAKAHIRO;KUBO, MASARU |
分类号 |
H01L27/146;(IPC1-7):H01L31/00 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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