| 摘要 |
PROBLEM TO BE SOLVED: To prevent a sputtering ceramic target for forming a lead-contg. perovskite type ferroelectric film from breaking and peeling off at a joint in film formation and to reduce a secular change due to increased frequency of use by specifying the grain diameter of the ceramic grains. SOLUTION: The grain diameter of ceramic grains forming the objective sputtering target is >=4 μm. The density of a ceramic material (sintered compact) forming the target is preferably >=97% of the theoretical density. The high density ceramic material has good heat conductivity and enhances sputtering characteristics. Liq. phase sintering is appropriately carried out after adding one or more of oxides of Li, B, Si, Ge, Bi, Zn and Pb as a sintering aid for the target. The amt. of the sintering aid added is preferably 2 wt.% based on the amt. of a calcined compact and the sintering aid is allowed to exist preferably by <=1 wt.% after concluding sintering. |
