发明名称 |
Construction of a tantalum nitride film on a semiconductor wafer |
摘要 |
The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer (film) of tantalum nitride material is deposited on the wafer. Next, the layer of tantalum nitride material is annealed. The deposition and annealing may both be accomplished in the same chamber, without need for removing the wafer from the chamber until both steps are completed.
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申请公布号 |
US5989999(A) |
申请公布日期 |
1999.11.23 |
申请号 |
US19970939914 |
申请日期 |
1997.09.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LEVINE, TIMOTHY E.;CHEN, LING;CHANG, MEI;MOSELY, RODERICK C.;LITTAU, KARL A.;RAAIJMAKERS, IVO |
分类号 |
C23C16/34;C23C16/458;C23C16/48;C23C16/509;C23C16/56;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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