| 摘要 |
An insulated gate thyristor includes a first-conductivity-type base layer having a high resistivity, first and second second-conductivity-type base regions formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type source region formed in a surface layer of the first second-conductivity-type base region, and a first-conductivity-type emitter region formed in a surface layer of the second second-conductivity-type base region. The thyristor further includes a gate electrode layer formed on an insulating film over the first second-conductivity-type base region, an exposed portion of the first-conductivity-type base layer and the second second-conductivity-type base region, a first main electrode that contacts both the first second-conductivity-type base layer and first-conductivity-type source region, a second-conductivity-type emitter layer formed on the first-conductivity-type base layer, a second main electrode that contacts the second-conductivity-type emitter layer, a gate electrode that contacts the gate electrode layer, and an insulating film covering entire areas of surfaces of the second second-conductivity-type base region and first-conductivity-type emitter region. In this insulated gate thyristor, the first-conductivity-type base layer includes a locally narrowed portion which is interposed between the first and second second-conductivity-type base regions.
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