发明名称 SPUTTERING TARGET, THERMAL HEAD PRODUCED BY USING THE TARGET AND PRODUCTION THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target for easily forming a hard protective film capable of preventing the charge of static electricity while maintaining low film defects, a thermal head produced by using the target and to provide a method for producing it. SOLUTION: In a thermal head provided with a supporting substrate 3, an exothermic resistor 4 formed on the supporting substrate, an electrode layer 5 connected onto the exothermic resistor and a protective layer 6 formed so as to cover at least the exothermic part of the exothermic resistor, the protective layer 6 is formed by using a sputtering target. It is desirable that the protective layer is provided at least with a primary protective layer which is brought into contact with the exothermic resistor and a secondary protective layer formed on the primary protective layer, the concn. of oxygen in the primary protective layer is 20 to 50 atm.% and the concn. of oxygen in the secondary protective layer is 5 to 30 atm.%.
申请公布号 JPH11310872(A) 申请公布日期 1999.11.09
申请号 JP19980117392 申请日期 1998.04.27
申请人 TOSHIBA CORP 发明人 KITAZAWA YUSUKE
分类号 B41J2/335;C04B35/584;C23C14/34 主分类号 B41J2/335
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