发明名称 GOLD ALLOY WIRE FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To make the alloy wire adequately cope with the loop trailing in wire bonding and the deformation of the loop hard to occur, even as the bonding wire for multiple-pin device by providing a sufficient heat resistance and the sufficient tensile strength at the normal-temperature and high temperature state for forming the further smaller ball and the thin diameter of a gold wire. SOLUTION: In high-purity gold, calcium of 5-50 weight ppm, yttrium of 5-50 weight ppm, samarium of 3-70 weight ppm, beryllium of 2-10 weight ppm and germanium of 5-50 weight ppm are added, respectively. The total quantity of these added elements is set in the range of 20-200 weight ppm, and the remaining part comprises unavoidable impurities. In this way, even in the gold alloy fine wire of the thin diameter (25 μm ϕ at the morphology level of actual program), both normal-temperature and high-temperature tensile strengths are superior, heat resistance and the tensile strength at the normal temperature are superior, and loop drooping and the deformation of the loop do not occur.
申请公布号 JPH11307574(A) 申请公布日期 1999.11.05
申请号 JP19980131339 申请日期 1998.04.24
申请人 TATSUTA ELECTRIC WIRE & CABLE CO LTD 发明人 IDE KENZO;TOKITA MASANORI
分类号 C22C5/02;H01L21/60 主分类号 C22C5/02
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