发明名称 SEMICONDUCTOR SUBSTRATE WITH NOTCH
摘要 <p>PROBLEM TO BE SOLVED: To provide the shape of a semiconductor substrate for easily distinguishing the front and rear surfaces in the semiconductor substrate in which the substrate front and rear surfaces are subjected to mirror surface machining in the semiconductor substrate, whose diameter exceeds 100 mm. SOLUTION: A notch (cut-out) 2 is provided at one portion of the outer periphery of a substrate body 1, and an orientation flat (straight part) 3 is provided at a portion other than the notch. An angle between a line passing through the tip of the notch and the center of a substrate body and the middle point of the orientation flat is less than 180 deg.. The notch is of a wedge shape, and the depth toward the center of the substrate body is 0.6 mm or longer. The relation among a length (x) of the orientation flat, a radius (r) of the semiconductor substrate body, and a depth (d) toward the substrate body center of the notch is such that they satisfy the formula 0<[r-(r<2> -(x/2)<2> )1/2 ]<d.</p>
申请公布号 JPH11297799(A) 申请公布日期 1999.10.29
申请号 JP19980099293 申请日期 1998.04.10
申请人 HITACHI CABLE LTD 发明人 ONISHI MASAYA;MASUYAMA SHOJI
分类号 H01L21/68;H01L21/02;(IPC1-7):H01L21/68 主分类号 H01L21/68
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