发明名称 |
Nonvolatile semiconductor memory equipped with single bit and multi-bit cells |
摘要 |
A nonvolatile semiconductor memory having a single bit cell array and a multi-bit cell array formed on a substrate of the memory is provided. The memory includes a plurality of memory blocks that correspond to the input/output lines and is divided into a plurality of pages. A plurality of bit lines of the single bit cell array is coupled to a plurality of page buffers. The multi-bit cell array includes a plurality of memory blocks in which one of the blocks corresponds to a plurality of the input/output lines and is divided into a plurality of pages. A plurality of bit lines of the multi-bit cell array is coupled to a plurality of page buffers, A timing controller arranges the processing operations in the two arrays.
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申请公布号 |
US5966326(A) |
申请公布日期 |
1999.10.12 |
申请号 |
US19970928121 |
申请日期 |
1997.09.12 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
PARK, JONG-WOOK;SEO, KANG-DEOK |
分类号 |
G11C16/06;G11C11/56;G11C16/02;G11C16/04;G11C16/10;H01L21/8247;H01L27/10;H01L27/115;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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