发明名称 |
PHOTOMASK, MANUFACTURE THEREOF, EXPOSURE METHOD AND MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To enhance the resolution of a pattern and the depth of focus by exposure processing using a photomask having a function giving phase difference to transmitted light. SOLUTION: This photomask is provided with aperture areas 7a repeatedly arranged at light shielding films 7, semi-transparent films 6 which are formed by projecting as much as prescribed width so as to frame the inside circumferences of the respective areas 7a and which invert the phase of the light in the light transmitted through the respective areas 7a and a transparent film 8 mutually inverting the phase of the light respectively transmitted through the mutually adjacent areas 7a. |
申请公布号 |
JPH11271955(A) |
申请公布日期 |
1999.10.08 |
申请号 |
JP19980070503 |
申请日期 |
1998.03.19 |
申请人 |
HITACHI LTD |
发明人 |
GYODA KAZUHIRO;OKAMOTO YOSHIHIKO |
分类号 |
H01L21/027;G03F1/29;G03F1/68 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|