| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming stable crystalline on the phosphorus- doped amorphous silicon surface in a manufacture of a semiconductor device such as a DRAM, in particular a method for forming an HSG-Si electrode for a semiconductor device. SOLUTION: When a substrate has an amorphous silicon layer to which an impurity is added, this manufacturer of a semiconductor device has a process of removing a natural oxide film on the surface of the amorphous silicon layer, a process of applying heat treatment to the substrate, a process of exposing the substrate to a silicon compound gas under a certain partial pressure, and a process of applying heat treatment to the substrate in a non-oxidizing gas atmosphere. At this time, prior to the process of removing a natural oxide film from the amorphous silicon layer surface, this manufacturing method, for a semiconductor device has a process of dipping the substrate in pure water. |
