| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of a crystal defect in a disphragm in the manufacturing method of a semiconductor pressure sensor in which a cavity is formed on a semiconductor substrate, followed by a heat treatment to form a standard pressure chamber which closes the cavity and then a diaphragm for pressure detection is formed in a part of the substrate corresponding to the standard pressure chamber, after which semiconductor elements are formed on the substrate. SOLUTION: A semiconductor substrate 1 on which a cavity 2 is formed and another substrate 3 are bonded, and an oxide film 4 is interlayed between them. By the following heat treatment to bond them, a standard pressure chamber 5 is formed. After that, elements such as a warp gauge 7 and an electrode 9 are formed for the substrate 1. At this time, assuming that a temperature of the heat treatment for the substrate 1 after forming the chamber 5 is T1( deg.C) and an internal pressure of the chamber 5 at a room temperature is P0(atm), the heat treatment temperature T1 is determined to be under (-430 P+1430) deg.C.
|
