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发明名称
METHOD FOR FORMING GATE SILICON OF SEMICONDUTOR DEVICE
摘要
申请公布号
KR20060034485(A)
申请公布日期
2006.04.24
申请号
KR20040083625
申请日期
2004.10.19
申请人
HYNIX SEMICONDUCTOR INC.
发明人
CHO, HEUNG JAE;LIM, KWAN YONG;YANG, HONG SEON
分类号
H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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