| 摘要 |
A functional semiconductor element, which is designed to perform an ultrafast amplifying, bistable, similar functional operation by initiating and stopping an avalanche multiplication in one of i-type layers of what is called a triangular barrier diode (TBD) structure having an n-i-p-i-n, p-i-n-i-p, n-i-p-i-p, n-i-n-i-p, n-i-n-i-n, p-i-n-i-n, p-i-p-i-p, or p-i-p-i-n configuration. By forming a light absorbing layer and a light emitting layer or light modulating layer in this structure, it is possible to function the element as an optical functional element. Furthermore, the addition of a resonant tunneling diode implements a novel function.
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