A TRANSISTOR OF SIC

摘要

A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions (16). The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width (Wa) of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer (11) in each individual cell and the lateral cell width (Wc) is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.