STATIC RANDOM ACCESS MEMORY CELL UTILIZING DRIVE TRANSISTORS WITH LOW THRESHOLD VOLTAGES

摘要

An SRAM or static random access memory cell for use in a microprocessor includes drive transistors configured as natural transistors which have low threshold voltages. A control circuit modulates a substrate or well bias signal to a well which contains the transistors to increase the threshold voltage during storage. The natural drive transistors have a greater drive strength than the pass gate transistors due to the doping characteristics associated with the low threshold voltage. The pass gate transistors and pull down transistors of the memory cell are disposed in the same well.