| 发明名称 |
Silicon nitride from bis(tertiarybutylamino) silane |
| 摘要 |
<p>A process for low pressure chemical vapour deposition of silicon nitride comprises contacting a substrate with ammonia and a silane of formula (t-C4H9NH)2SiH2 to deposit silicon nitride. Preferably the process is carried out at 500-800[deg]C at a pressure of 20 mTorr to 2 Torr with an ammonia:silane mole ratio of >2:1.</p> |
| 申请公布号 |
SG66493(A1) |
申请公布日期 |
1999.07.20 |
| 申请号 |
SG19980003737 |
申请日期 |
1998.09.18 |
| 申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
LAXMAN RAVI KUMAR;ROBERTS DAVID ALLEN;HOCHBERG ARTHUR KENNETH;HOCKENHULL HERMAN GENE;KAMINSKY FELICIA DIANE |
| 分类号 |
C07F7/02;C23C16/34;H01L21/318;(IPC1-7):H01L21/318 |
主分类号 |
C07F7/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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