Super low-ohmic vertical MOSFET

摘要

The MOSFET has source and gate zones (8,10) formed in one surface of a semiconductor substrate , with a drain zone (2) formed in its opposite surface, with column-shaped zones (11,12) of opposite type formed in the drift zone (3,4) between the opposing surfaces of the substrate. The drift zone has a number of layers of alternating conductivity extending perpendicular to the column-shaped zones, contacted by the latter at spaced points.