发明名称 |
Metal contact to a novel polysilicon contact extension |
摘要 |
A method has been developed for forming a metal contact structure, to an underlying polysilicon contact extension structure, without degrading the polysilicon contact extension structure during the metal contact structure patterning procedure. The process features opening a hole in an insulator layer, to an underlying polysilicon extension structure. The overlying metal contact structure is then patterned to have a width larger then the width of the opened hole in the insulator. Therefore the underlying polysilicon contact extension structure is not exposed to the RIE procedures used to define the metal contact structure.
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申请公布号 |
US5905306(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19970912536 |
申请日期 |
1997.08.18 |
申请人 |
TAIWAN SEMICONDUCTORS MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG, BO-JEIH;FU, CHANG;LIU, JEN SONG |
分类号 |
H01L21/768;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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