摘要 |
An operational amplifier-based voltage multiplier circuit ("op amp circuit") implemented as an integrated circuit, and a memory chip including such an op amp circuit. The op amp circuit includes a variable operational feedback or input resistance (or a variable operational feedback resistance and a variable input resistance), and preferably also circuitry for controlling at least one variable resistance in response to control bits to cause the op amp circuit to assert a selected output voltage in response to a given input voltage. Preferably, each set of control bits determines a binary control word whose binary value has a simple functional relation to the value of the output voltage selected thereby. Preferably, the memory chip includes an array of memory cells (e.g, flash memory cells) and a control unit for controlling memory operations including programming, reading, and erasing the memory cells. The op amp circuit outputs each selected output voltage in response to a different binary control word asserted by the control unit. Each binary control word is preferably determined by a set of control bits whose binary value has a simple functional relation to the value of the output voltage selected thereby. The memory chip preferably includes non-volatile data storage units which store bits of the binary control words.
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