发明名称 Op amp circuit with variable resistance and memory system including same
摘要 An operational amplifier-based voltage multiplier circuit ("op amp circuit") implemented as an integrated circuit, and a memory chip including such an op amp circuit. The op amp circuit includes a variable operational feedback or input resistance (or a variable operational feedback resistance and a variable input resistance), and preferably also circuitry for controlling at least one variable resistance in response to control bits to cause the op amp circuit to assert a selected output voltage in response to a given input voltage. Preferably, each set of control bits determines a binary control word whose binary value has a simple functional relation to the value of the output voltage selected thereby. Preferably, the memory chip includes an array of memory cells (e.g, flash memory cells) and a control unit for controlling memory operations including programming, reading, and erasing the memory cells. The op amp circuit outputs each selected output voltage in response to a different binary control word asserted by the control unit. Each binary control word is preferably determined by a set of control bits whose binary value has a simple functional relation to the value of the output voltage selected thereby. The memory chip preferably includes non-volatile data storage units which store bits of the binary control words.
申请公布号 US5903504(A) 申请公布日期 1999.05.11
申请号 US19970978734 申请日期 1997.11.26
申请人 MICRON TECHNOLOGY, INC. 发明人 CHEVALLIER, CHRISTOPHE J.;BRINER, MICHAEL S.
分类号 G11C5/14;G11C16/28;G11C16/30;H03G1/00;H03G3/00;(IPC1-7):G11C7/02 主分类号 G11C5/14
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