发明名称 |
CMOS-Halbleitervorrichtung und Verfahren zu deren Herstellung |
摘要 |
There are disclosed a semiconductor device and a method for fabrication thereof. The semiconductor device comprises an insulating film for well isolation which electrically insulates N-well from P-well, the drain electrode of PMOS and the drain electrode of NMOS being adjacent to the trench for well isolation, and a conductive wire filling one contact hole which interconnects the drain electrodes of N-well with those of P-well. The semiconductor device is very reduced in size, and thus, high integration thereof can be achieved. |
申请公布号 |
DE19501557(C2) |
申请公布日期 |
1999.04.08 |
申请号 |
DE1995101557 |
申请日期 |
1995.01.19 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., ICHON, KYOUNGKI-DO, KR |
发明人 |
KIM, JAE KAP, ICHON, KR |
分类号 |
H01L21/28;H01L21/60;H01L21/762;H01L21/768;H01L21/8238;H01L27/092;(IPC1-7):H01L27/092;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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