| 摘要 |
PROBLEM TO BE SOLVED: To prevent peeling of a target material which redeposits on the target during sputtering and to improve the yield of products by forming a thin film containing the structural elements of the target material to specified thickness on the sputtering surface of the target material. SOLUTION: A thin film having 50 nm to 1μm thickness is formed by sputtering on the sputtering surface of a target material substantially comprising Cr, C, In-Sn-O, etc. This thin film preferably consists of elements substantially same as the elements which constitute the target material or the film consists of the reaction product of these elements with reactive gas. The sputtering target comprising the target material with the thin film formed is used to form a thin film on a substrate by sputtering or reactive sputtering. By this method, the deposition strength of the target material redepositing on the sputtering surface is increased so that it hardly peels and generation of dust can be suppressed.
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