发明名称 |
Method for manufacturing semiconductor device and reticle for wiring |
摘要 |
A method for manufacturing semiconductor device is provided, this method comprises the steps of: depositing a metal film for forming wirings on a substrate; forming a wiring layer, wherein dummy wiring is inserted between wiring space where the dummy wiring can be inserted, and wiring space, where the dummy wiring cannot be inserted, is reduced by widening wiring pattern facing the wiring space; forming an interlayer insulating film on said wiring layer; and flattening surface of the interlayer insulating film. The film can be flattened by a CMP method or by an etchback of entire surface of the film. It is possible to flatten the surface of the semiconductor device cost-effectively and precisely.
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申请公布号 |
US5888900(A) |
申请公布日期 |
1999.03.30 |
申请号 |
US19970901697 |
申请日期 |
1997.07.28 |
申请人 |
KAWASAKI STEEL CORPORATION;PIONEER ELECTRONIC CORPORATION;PIONEER VIDEO CORPORATION |
发明人 |
MIZUNO, MAKOTO;SHIMIZU, TOSHIHIRO;FUJISHIMA, MASAAKI;HANIHARA, KOJI;TSUCHIYA, ITARU;YAGI, YASUO |
分类号 |
H01L21/3105;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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